| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1666735 | Thin Solid Films | 2012 | 9 Pages |
Abstract
⺠a-SiC:H films were produced at various substrate temperatures in the range 30-400 °C. ⺠Si-carbidic network is formed in the films deposited at high temperatures (> 200 °C). ⺠The physical, optical, and mechanical properties of a-SiC:H films were examined. ⺠The film properties are strongly influenced by the content of SiC carbidic bonds. ⺠The films formed at 300 °C are very hard coatings exhibiting weak photoluminescence.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A.M. Wrobel, A. Walkiewicz-Pietrzykowska, P. Uznanski, B. Glebocki,