| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1666757 | Thin Solid Films | 2012 | 6 Pages |
Zinc nitride films were deposited on Si(100) substrates at room temperature using RF-magnetron sputtering in pure N2 and in Ar + N2 atmospheres. Two active phonon modes (270.81 and 569.80 cm− 1) are observed in Raman spectra for films deposited in Ar + N2 atmosphere. Atomic force microscopy showed that the average surface roughness of the films deposited in pure N2 atmosphere (1.3–3.33 nm) was less than for those deposited in a mixed Ar + N2 atmosphere (10.3–12.8 nm). Low temperature cathodoluminescence showed two emission bands centered at 2.05 eV and 3.32 eV for both types of films.
► Zn2N3 thin films were grown in pure N2 and in Ar–N2 mixture. ► Optical properties of Zn2N3 thin films were examined. ► Different preferred crystal orientations were observed for N2 and Ar + N2. ► Raman spectra show two active phonon modes for the Ar + N2 films. ► Low T cathodoluminescence shows two emission bands at 2.05 eV and 3.32 eV.
