| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1666772 | Thin Solid Films | 2013 | 4 Pages |
Transparent conductive oxide thin films in solar cell fabrication have attracted much attention due to their high conductivity and transmittance. In this paper, we have investigated the aluminum-doped zinc oxide (AZO) thin films prepared by radiofrequency magnetron sputtering on Asahi U-type SnO2 glass with different O2/Ar flow ratios in vacuum chamber. Furthermore, the micro-structural, electrical, and optical properties of AZO/SnO2 films were studied. The change in O2/Ar flow ratios is found to significantly affect the haze value, and slightly affect electrical resistivity and transmittance of the films. Afterward, the fabricated AZO thin films with different O2/Ar flow ratios were used for building the solar cell devices. The current–voltage and external quantum efficiency characteristics were investigated for the solar cell devices. The optimized O2/Ar flow ratio of 3 for solar device shows the best efficiency of 10.41%, and a 20% increase in short-circuit current density compared to typical Asahi solar cells.
► A thin Al-doped zinc oxide (AZO) film has been deposited on SnO2 substrates. ► The AZO film deposited at an O2/Ar ratio of 3 shows low resistivity and high haze. ► The AZO film contains tiny grains that enhance light scattering. ► The amorphous silicon solar cell with the AZO layer shows a 20% increase in Jsc.
