| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1666791 | Thin Solid Films | 2013 | 5 Pages |
Abstract
⺠Growth of GaN nanowires by plasma-enhanced chemical vapor deposition. ⺠Control the lateral growth of GaN nanowires by introducing hydrogen plasma. ⺠Hydrogen plasma induces desorption of Ga adatoms on GaN nanowires. ⺠Hydrogen plasma etches high index planes into thermodynamically stable planes.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Tung-Hsien Wu, Franklin Chau-Nan Hong,