| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1666813 | Thin Solid Films | 2013 | 4 Pages |
We have demonstrated nano-structured Cu(In,Al)Se2 (CIAS) near-infrared (NIR) photodetectors (PDs). The CIAS NIR PDs were fabricated on ZnO nanowires (NWs)/ZnO/Mo/ITO (indium tin oxide) glass substrate. CIAS film acted as a sensing layer and sparse ZnSe NWs, which were converted from ZnO NWs after selenization process, were embedded in the CIAS film to improve the amplification performance of the NIR PDs. X-ray diffraction patterns show that the CIAS film is a single phased polycrystalline film. Scanning electron microscopy was used to examine the morphology of the CIAS film and the growth of NWs. Two detection schemes, plain Al–CIAS–Al metal–semiconductor–metal structure and vertical structure with CIAS/ZnSe NWs annular p–n junctions, were studied. The nano-structured NIR PDs demonstrate two orders of magnitude for the annular p–n junction and one order of magnitude for the MSM structure in photocurrent amplification. The responsivities of the PDs using both sensing structures have the same cut-off frequency near 790 nm.
► We demonstrate nano-structured Cu(In,Al)Se2 near-infrared photodetectors. ► Photodetectors were fabricated on ZnO nanowires/ZnO/Mo/ITO glass substrate. ► Two detection schemes studied: a plain MSM structure and a vertical structure. ► Photocurrent amplification for the vertical structure is two orders of magnitude. ► Photocurrent amplification for the MSM structure is one order of magnitude.
