Improved microcrystalline silicon and gate insulator interface with a pad/buffer structure

Article ID	Journal	Published Year	Pages	File Type
1666846	Thin Solid Films	2013	4 Pages	PDF

Abstract

âº An amorphous silicon pad layer protects gate insulator from being bombarded. âº A microcrystalline silicon buffer layer on the pad is good for channel deposition. âº Flat channel/gate insulator interface forms by using pad/buffer structure.

Keywords

bombardment Re-crystallization Microcrystalline Gate leakage

Related Topics

Physical Sciences and Engineering Materials Science Nanotechnology

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Improved microcrystalline silicon and gate insulator interface with a pad/buffer structure

Authors

C.W. Lin, Y.C. Tsai, Y.L. Chen,