| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1666866 | Thin Solid Films | 2013 | 9 Pages |
Abstract
⺠This work investigates the impact of mechanical strain on GIFBE for PD SOI p-MOSFETs. ⺠FB device shows an insignificant NBTI due to GIFBE. ⺠GIFBE results from the partial n+ poly gate and anode electron injection model. ⺠The strained FB device has less NBTI degradation than unstrained devices. ⺠We verify the band gap narrowing causes less NBTI on strained FB device.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Wen-Hung Lo, Ting-Chang Chang, Chih-Hao Dai, Wan-Lin Chung, Ching-En Chen, Szu-Han Ho, Jyun-Yu Tsai, Hua-Mao Chen, Guan-Ru Liu, Osbert Cheng, Cheng-Tung Huang,