Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1666934 | Thin Solid Films | 2012 | 4 Pages |
Abstract
ZnO memory device with SnO2 nanocrystals embedded in a biphenyl-tertracarboxylic dianhydride-phenylen diamine polyimide layer was fabricated, and its electrical properties were evaluated. The complementary resistive switching effects with a current bistability appeared during voltage sweeping in the range of ± 4 V and ± 5 V, respectively. This switching effect of current-voltage may be originated from a resistance fluctuation due to the charge trapping into SnO2 nanocrystals. In the bipolar resistance switching behavior, the ratio of high-resistance state (HRS) and low-resistance state (LRS) currents was about 4.4 Ã 104 at 1 V. The data retention of LRS/HRS currents was maintained about 2.2 Ã 103 after 103 s.
Related Topics
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Nanotechnology
Authors
Dong Uk Lee, Eun Kyu Kim, Won-Ju Cho, Young-Ho Kim, Hyunsik Im,