| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1666940 | Thin Solid Films | 2012 | 5 Pages |
CuInS2 thin films were prepared using an aerosol jet deposition (AJD) technique with an aqueous solution of CuCl2, InCl3 and thiourea on a heated glass substrate. X-ray diffraction patterns showed that well-crystallized thin films with a preferential (112) orientation could be deposited at 400 °C and [Cu]/[In] molar ratio of 1.2. Field emission scanning electron microscopy revealed well-crystallized grains in the films produced at high temperature of 400 °C. In addition, energy dispersive X-ray spectroscopy confirmed that excess Cu and S were required to achieve well-crystallized CuInS2 films. As the [Cu]/[In] molar ratio increased from 0.8 to 1.4, the highest intensity of the (112) orientation and better crystallization were obtained at a [Cu]/[In] ratio of 1.2. The [Cu]/[In] ratios in the film were always higher than those in the precursor solution. All the CuInS2 thin films turned out to be p-type and had a band gap of 1.4 eV. The depth profiles of Cu, In and S in the CuInS2 thin films deposited at the optimal [Cu]/[In] and [S]/[In] ratios of 1.2 and 3, respectively, were relatively constant throughout the films. Overall, the CuInS2 thin films deposited using the AJD method have well grown grains with good crystallinity.
