| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1666951 | Thin Solid Films | 2012 | 4 Pages |
Abstract
Excellent dc performance of an InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor (HBT) using a linearly graded InxGa1 − xP metamorphic buffer layer grown on GaAs substrate is demonstrated. The employment of a δ-doped sheet between two undoped spacer layers could eliminate the potential spike at base–emitter junction and increase the effective barrier, which could prevent the hole injection from base into emitter. A maximum current gain of 255, a low offset voltage of 105 mV, and a small second (third) harmonic distortions of 0.545 (− 0.05) at VCE = 2.5 V are obtained. The current gain and offset voltage are the best values than that of the previous InP/InGaAs metamorphic HBT.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Jung-Hui Tsai, Wen-Shiung Lour, Yi-Ting Chao, Sheng-Shiun Ye, Yung-Chun Ma, Jia-Cing Jhou, You-Ren Wu, Jhih-Jhong Ou-Yang,