Influence of radical power on the electrical and optical properties of ZnO:N films grown by metal-organic chemical vapor deposition with N2O plasma doping source

N-doped ZnO (ZnO:N) films are grown by a low-pressure plasma assisted metal-organic chemical vapor deposition system on insulating Si (111) substrate. N2O plasma is used as the N precursor of ZnO:N films, which is activated by a radio frequency generator. The influence of activating power on the properties of ZnO films is studied by means of X-ray diffraction, Hall effect, X-ray photoelectron spectroscopy and low temperature photoluminescence measurements. P-type ZnO:N films with acceptable electrical and optical properties are achieved under the optimal activating power conditions. XPS study reveals a competition between acceptor NO and donor (N2)O during doping influence the properties of ZnO films.