| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1667017 | Thin Solid Films | 2012 | 5 Pages |
Abstract
⺠Amorphous In-Ga-Zn-O (a-IGZO) films deposited using radio frequency sputtering. ⺠Average transmittance of zinc-rich a-IGZO films over 80% in various O2 flows. ⺠Average transmittance of zinc-less a-IGZO film without O2 flow decreased below 10%. ⺠In and In2O3 crystalline precipitation can lower transmittance in In-rich a-IGZO films. ⺠a-IGZO resistivity increased with Ga content increase and In content decrease.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yih-Shing Lee, Wei-Jhe Chen, Jyun-Sheng Huang, Shich-Chuan Wu,