Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1667021 | Thin Solid Films | 2012 | 7 Pages |
Abstract
⺠Al-doped ZnO films were deposited at room temperature (RT) and H2 atmosphere. ⺠The electrical properties of the films showed unusual change with pressure and power. ⺠Optimized electrical and optical properties were obtained at 0.8 Pa and 100 W. ⺠The resistivity of 1.43´10-3 W·cm and the transmittance of 90.5% were obtained at RT. ⺠The change of structure and lattice defect with pressure and power is affected by H2.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
B.L. Zhu, J. Wang, S.J. Zhu, J. Wu, D.W. Zeng, C.S. Xie,