Optimization of sputtering parameters for deposition of Al-doped ZnO films by rf magnetron sputtering in Ar + H2 ambient at room temperature

► Al-doped ZnO films were deposited at room temperature (RT) and H2 atmosphere. ► The electrical properties of the films showed unusual change with pressure and power. ► Optimized electrical and optical properties were obtained at 0.8 Pa and 100 W. ► The resistivity of 1.43´10-3 W·cm and the transmittance of 90.5% were obtained at RT. ► The change of structure and lattice defect with pressure and power is affected by H2.