Article ID Journal Published Year Pages File Type
1667023 Thin Solid Films 2012 5 Pages PDF
Abstract
► Coaxial InxGa1 − xN/GaN nanowires (NWs) were grown on Si(111) substrates. ► Two step growth procedures were adopted to grow core and shell structures. ► A very smooth surface morphology of InxGa1 − xN/GaN NWs was obtained. ► Dissociation of precursors at an elevated temperature forms the uniform coaxial NWs.
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Physical Sciences and Engineering Materials Science Nanotechnology
Preview
The effect of growth temperature on the coaxial InxGa1 − xN/GaN nanowires grown by metalorganic chemical vapor deposition
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