| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1667050 | Thin Solid Films | 2012 | 4 Pages |
In this work the impact of doped GaAs buffer and cap layers on the bismide photoluminescence (PL) spectra has been studied. For this study three types of heterostructures were grown: a thin GaAsBi layer deposited directly onto the nominally undoped GaAs buffer layer, a GaAsBi layer grown onto the GaAs:Be layer, and a GaAsBi layer deposited onto the GaAs:Be layer and capped with the GaAs:Be layer. It has been demonstrated that p-type doping of the GaAs buffer and cap layers is resulting in a significant increase of the PL intensity. This enhancement was explained by a better photoexcited electron and hole confinement in the GaAsBi layer.
► The influence of GaAs buffer and cap doping on GaAsBi photoluminescence (PL). ► The enhancement of PL for GaAsBi sandwiched between p-GaAs layers. ► Increase in PL due to better photoexcited e and h confinement in GaAsBi layer.
