| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1667063 | Thin Solid Films | 2012 | 5 Pages |
Antimony (Sb) doping of SnO2 nanowires (NWs) was investigated for its optical and electrical effects. The low-temperature photoluminescence spectra of SnO2 NWs varied significantly with increasing Sb content, where the temperature-dependence of the visible emission at ca. 400 nm was distinctive with Sb-doping, indicating different defect states, such as neutral and positively charged oxygen vacancies. Field effect transistors (FETs) with low-level Sb-doped SnO2 NW channels exhibited higher mobility, charge concentration, and faster response and recovery to UV light than intrinsic SnO2 NW FETs.
► Sb-doping induced defect states were distinguished by photoluminescence measurement. ► Sb-doping enhanced the field effect mobility and charge concentration. ► Off-state UV photosensitivity of SnO2 nanowire field effect transistor (FET) was 106. ► Sb-doping improved the UV-response and recovery rates of SnO2 nanowire FETs.
