| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1667093 | Thin Solid Films | 2012 | 6 Pages |
Abstract
⺠Material performance of Ge2Sb2Te5 (GST) is modified by Si-ion implantation. ⺠Crystallization temperature of Si-ion implanted GST films is much enhanced. ⺠Thermal stability of GST is much improved at high dose Si-ion implantation. ⺠FCC transition to HCP of GST is inhibited at high dose Si-ion implantation.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Po-Hsiang Lee, Po-Chin Chang, Der-Sheng Chao, Jenq-Horng Liang, Shih-Chin Chang, Ming-Jinn Tsai, Tsung-Shune Chin,