| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1667114 | Thin Solid Films | 2012 | 4 Pages |
In2S3 thin films have been grown on Indium Tin Oxide (ITO) by Chemical Spray Pyrolysis. The structural and physical–chemical properties of the films have been investigated by means of X-ray Diffraction and X-ray Photoelectron spectroscopy (XPS). The valence band discontinuity at the In2S3/ITO interface has been determined by XPS resulting in a value of 1.9 ± 0.2 eV. Consequently, the conduction band offset has been estimated to be 1.0 ± 0.4 eV.
► In2S3 thin films grown on indium tin oxide (ITO) coated substrates. ► In2S3 films prepared by chemical spray pyrolysis. ► Films show a tetragonal β‐In2S3 structure with substitutional ‘O’ in ‘S’ sites. ► The In2S3/ITO interface has been investigated by X-ray photoelectron spectroscopy. ► The valence and conduction band offsets were 1.9 ± 0.2 eV and 1.0 ± 0.4 eV, respectively.
