Transparent p-type conducting K-doped NiO films deposited by pulsed plasma deposition

Transparent p-type conducting K-doped NiO thin films were prepared by pulsed plasma deposition. The structural, electrical and optical properties of the films were investigated using X-ray diffraction, atomic force microscope, X-ray photoelectron spectroscopy, Hall measurement, and ultraviolet–visible spectroscopy, respectively. The dependency of film properties on K doping content and substrate temperature was studied. The film with K doping content of 25 at.% deposited at room temperature exhibits the highest conductivity of 4.25 S cm− 1 and an average transmittance of nearly 60% in visible light region.

► P-type K-doped NiO films were deposited by pulsed plasma deposition. ► The resistivity of the films is lowered with proper doping content. ► The film crystallinity is improved with the increase of substrate temperature. ► The film deposited at room temperature exhibits the conductivity of 4.25 S cm− 1.