| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1667180 | Thin Solid Films | 2012 | 4 Pages |
Abstract
Nominally undoped ZnO nanorods, grown by a chemical method, have been post-treated to intentionally incorporate high concentrations of zinc vacancies and zinc interstitials and were studied with electron microscopy and low temperature photoluminescence spectroscopy. The Zni are related to the 3.405 eV peak at 4.2 K, verifying that Zni is a shallow donor lying 30 meV below the conduction band minimum, while the acceptors VZn are related to the 3.308 eV peak at 4.2 K and have an activation energy of 123 meV.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
N. Boukos, C. Chandrinou, A. Travlos,