Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1667196 | Thin Solid Films | 2012 | 4 Pages |
Abstract
The effect of the indium content in indium tin oxide (ITO) films fabricated using a solution-based process and ITO channel thin film transistors (TFTs) was examined as a function of the indium mole ratio. The carrier concentration and resistivity of the ITO films could be controlled by the appropriate treatments. The TFTs showed an increase in the off-current due to the enhanced conductivity of the ITO channel layer with increasing indium mole ratios, producing an increase in the field effect mobility. The characteristics of the a-ITO channel TFT showed the best performance (μFE of 3.0 cm2 V− 1 s− 1, Vth of 2.0 V, and S value of 0.4 V/decade) at In:Sn = 5:1.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
C.H. Jung, J.Y. Lee, L.S. Pu, K.S. Lee, D.H. Yoon,