Article ID Journal Published Year Pages File Type
1667196 Thin Solid Films 2012 4 Pages PDF
Abstract

The effect of the indium content in indium tin oxide (ITO) films fabricated using a solution-based process and ITO channel thin film transistors (TFTs) was examined as a function of the indium mole ratio. The carrier concentration and resistivity of the ITO films could be controlled by the appropriate treatments. The TFTs showed an increase in the off-current due to the enhanced conductivity of the ITO channel layer with increasing indium mole ratios, producing an increase in the field effect mobility. The characteristics of the a-ITO channel TFT showed the best performance (μFE of 3.0 cm2 V− 1 s− 1, Vth of 2.0 V, and S value of 0.4 V/decade) at In:Sn = 5:1.

Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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