Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1667200 | Thin Solid Films | 2012 | 4 Pages |
Abstract
In this paper we investigated atomic layer deposition (ALD) TiO2 thin films deposited on implantable neuro-chips based on electrolyte-oxide-semiconductor (EOS) junctions, implementing both efficient capacitive neuron-silicon coupling and biocompatibility for long-term implantable functionality.The ALD process was performed at 295 °C using titanium tetraisopropoxide and ozone as precursors on needle-shaped silicon substrates. Engineering of the capacitance of the EOS junctions introducing a thin Al2O3 buffer layer between TiO2 and silicon resulted in a further increase of the specific capacitance. Biocompatibility for long-term implantable neuroprosthetic systems was checked upon in-vitro treatment.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
E. Cianci, S. Lattanzio, G. Seguini, S.Vassanelli, M. Fanciulli,