| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1667222 | Thin Solid Films | 2012 | 6 Pages |
Abstract
⺠Close space vapor transport (CSVT) is used to deposit Bi2Te3. ⺠Temperature range 325-350 °C is appropriate for obtained Bi2Te3 by CSVT. ⺠At CSVT substrate temperatures higher than 400 °C other Bi-Te phases appear. ⺠Phases different from Bi2Te3 degrade the thermoelectric properties. ⺠Non-stoichiometry and stacking sequence is the structural key of Bi-Te system.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Francisco Cruz-Gandarilla, Osvaldo Vigil-Galán, Jose Gerardo Cabañas-Moreno, Jorge Sastré-Hernández, Francois Roy,