| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1667376 | Thin Solid Films | 2012 | 4 Pages |
Abstract
Crystallization process and the corresponding electrical resistance change were investigated in eutectic Si15Te85 amorphous thin films. The Si15Te85 amorphous film showed two-stage crystallization process upon heating. In the first stage, the Si15Te85 amorphous crystallized into Te crystals at 175 °C. In the second stage, the residual amorphous phase crystallized into Si2Te3 crystals at above 300 °C accompanying the resistance drop. Before the second crystallization, the electrical resistance once increased in the temperature range of about 250–295 °C. This phenomenon can be explained by considering the formation of amorphous phase with a high electrical resistivity.
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Authors
Yuta Saito, Yuji Sutou, Junichi Koike,