| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1667414 | Thin Solid Films | 2012 | 8 Pages |
Abstract
⺠HfO2 is prepared by sputtering as a high-κ material. ⺠We present a method of preventing low-κ interfacial growth. ⺠The method is based on the pre-deposition of a magnesium metallic interlayer. ⺠The effect of the post-deposition annealing under nitrogen is also studied.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
E. Rauwel, P. Rauwel, F. Ducroquet, M.F. Sunding, I. Matko, A.C. Lourenço,