| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1667428 | Thin Solid Films | 2012 | 4 Pages |
In this article, we report the forming-free resistive switching behavior of a Ru/Dy2O3/TaN memory device incorporating a Dy2O3 thin film fabricated entirely through processing at room temperature. We used X-ray diffraction, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy to investigate the structural and chemical features of the Dy2O3 film. The dominant conduction mechanisms in the low- and high-resistance states were ohmic behavior and Poole–Frenkel emission, respectively. The Ru/Dy2O3/TaN memory device exhibited a high resistance ratio and provided nondestructive readout and reliable data retention. This memory device has a great potential for application in nonvolatile resistive switching memory.
►The forming-free resistive switching behavior in the Ru/Dy2O3/TaN device was investigated. ►The conduction mechanisms of the device are ohmic behavior and Poole–Frenkel emission. ►This memory device exhibits good electrical characteristics.
