| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1667460 | Thin Solid Films | 2012 | 5 Pages |
Gallium oxide (Ga2O3) films were deposited on MgO (100) substrates by metalorganic vapor phase epitaxy. Structure analyses showed that the films deposited at 550–700 °C were epitaxial β-Ga2O3 films with an out of plane relationship of β-Ga2O3(100)||MgO(100). The film deposited at 650 °C showed the best crystallinity and the microstructure of the film was investigated by high resolution transmission electron microscopy. A theoretical model of the growth mechanism was proposed and the in-plane epitaxial relationship was given to be β-Ga2O3[001]||MgO<011>. A four-domain structure inside the epitaxial film was clarified. The β-Ga2O3 film deposited at 650 °C showed an absolute average transmittance of 95.9% in the ultraviolet and visible range, which had an optical band gap of 4.87 eV.
► Beta Ga2O3 epitaxial films were deposited on MgO(100) substrate. ► A theoretical model of the growth mechanism was proposed. ► The transmittance of the film in the ultraviolet and visible region exceeded 95.9%.
