| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1667466 | Thin Solid Films | 2012 | 5 Pages |
Abstract
⺠High quality ZnO:Al thin films by high-power impulse magnetron sputtering. ⺠Sputtering of an auxiliary Al electrode to control Al doping. ⺠Biasing potential of Al electrode controlled the Al content in ZnO:Al films. ⺠Optically transparent ZnO:Al films with minimum resistivity of 3.6´10-3 Ω´cm.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
V. Tiron, L. Sirghi, G. Popa,