Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1667511 | Thin Solid Films | 2012 | 5 Pages |
Abstract
In this work, we demonstrate substitutional phosphorus concentration as high as 12Â at.% in epitaxial silicon. It is observed that 10Â at.% substitutional phosphorus doping is equivalent in tensile strain to incorporating 2.1Â at.% substitutional carbon into the silicon lattice. Phosphorus doping of this order produces tensile strain levels suitable for n-channel metal-oxide semiconductor field-effect transistor uniaxial stressor applications. This work focuses on the experimental and theoretical analyses of phosphorus doped silicon based on high resolution X-ray rocking curves, secondary ion mass spectroscopy, Rutherford backscattering spectroscopy, and molecular dynamic modeling.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
K.D. Weeks, S.G. Thomas, P. Dholabhai, J. Adams,