Article ID Journal Published Year Pages File Type
1667532 Thin Solid Films 2012 4 Pages PDF
Abstract

Binary and ternary Si/Ge/Sn alloys were epitaxially grown on virtual Germanium buffer layers using pulsed laser induced epitaxy with a 193 nm Excimer laser source. The role of the processing parameters on the intermixing of the components (Sn, Ge and Si) has been studied. Characterization of the resulting Ge1 − xSnx and Si1 − y − xGeySnx alloys yield up to 1% Sn concentration in substitutional sites of the Ge or SiGe matrix.

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Physical Sciences and Engineering Materials Science Nanotechnology
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