Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1667532 | Thin Solid Films | 2012 | 4 Pages |
Abstract
Binary and ternary Si/Ge/Sn alloys were epitaxially grown on virtual Germanium buffer layers using pulsed laser induced epitaxy with a 193 nm Excimer laser source. The role of the processing parameters on the intermixing of the components (Sn, Ge and Si) has been studied. Characterization of the resulting Ge1 − xSnx and Si1 − y − xGeySnx alloys yield up to 1% Sn concentration in substitutional sites of the Ge or SiGe matrix.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
S. Stefanov, J.C. Conde, A. Benedetti, C. Serra, J. Werner, M. Oehme, J. Schulze, S. Chiussi,