| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1667547 | Thin Solid Films | 2012 | 6 Pages |
Abstract
The Implant-Free Quantum Well Field-Effect Transistor (FET) offers enhanced scalability in a planar architecture through the integration of heterostructures. The Implant-Free architecture fully utilizes the band offsets between different materials, whereby charge carriers are effectively confined to a thin channel layer. This prevents sub-surface source/drain leakage observed in classical bulk Metal-Oxide-Semiconductor FETs at small gate lengths. An investigation of the VT-tuning capabilities of this technology reveals sensitivity to both well doping and bulk voltage.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Geert Hellings, Andriy Hikavyy, Jerome Mitard, Liesbeth Witters, Brahim Benbakhti, AliReza Alian, Niamh Waldron, Hugo Bender, Geert Eneman, Raymond Krom, Andreas Schulze, Wilfried Vandervorst, Roger Loo, Marc Heyns, Marc Meuris, Thomas Hoffmann,