| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1667551 | Thin Solid Films | 2012 | 4 Pages |
Abstract
In this work we optimized the Ge-spiked monoemitter for the SiGe:C heterojunction bipolar transistor by using low-temperature trisilane based chemical vapor deposition to meet the requirements of high growth rate and high electrically-active doping levels of arsenic. The resultant devices show improvement of open-base breakdown voltage and no degradation of cutoff frequency with incorporation of a Ge spike in the monoemitter.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Shuzhen You, Stefaan Decoutere, Ngoc Duy Nguyen, Stefaan Van Huylenbroeck, Arturo Sibaja-Hernandez, Rafael Venegas, Roger Loo, Kristin De Meyer,