Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1667552 | Thin Solid Films | 2012 | 5 Pages |
Abstract
Average position of electrons along thickness direction in a Coulomb island in an n-channel Si single-electron transistor is estimated by analyzing the back-gate voltage dependence of peak voltage (defined as the gate voltage giving a drain current peak) as a function of peak number. It is found that the accuracy of estimated average position is better than 0.5Â nm and that the average position fluctuates as the peak number increases.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Seiji Horiguchi, Akira Fujiwara,