Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1667557 | Thin Solid Films | 2012 | 5 Pages |
Abstract
Schottky-barrier changes by the segregation and structural disorder are studied using the first-principles calculations and adopting Au/Si interface. The Schottky barrier for electrons simply decreases as increasing the valency of segregated atoms from II to VI families, which variation is shown closely related to how the Si atoms are terminated at the interface. On the other hand, the structural disorders (defects) prefer to locate near the interface and the Schottky barrier for hole carriers does not change in cases of Si vacancy and Au substitution, while it increases in cases of Si and Au interstitials reflecting the appearance of Si dangling bonds.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
T. Nakayama, K. Kobinata,