| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1667566 | Thin Solid Films | 2012 | 4 Pages |
Abstract
A transparent resistive random access memory used as Indium Tin Oxide (ITO) electrode, ITO/HfO2/Al2O3/…/HfO2/Al2O3/ITO capacitor structure is fabricated on glass substrate by atomic layer deposition. The unipolar resistive switching characteristics can be performed by applying the positive- or negative-bias through top electrode, however, the differences of switching and stability in the two different operations can be observed. The diversities of electrical property are attributed to different oxide/ITO interface materials, which influence the current flow of the injected electrons.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Wen-Hsien Tzeng, Chia-Wen Zhong, Kou-Chen Liu, Kow-Ming Chang, Horng-Chih Lin, Yi-Chun Chan, Chun-Chih Kuo, Feng-Yu Tsai, Ming Hong Tseng, Pang-Shiu Chen, Heng-Yuan Lee, Frederick Chen, Ming-Jinn Tsai,