Ti-doped Gd2O3 sensing membrane for electrolyte–insulator–semiconductor pH sensor

The paper reports Ti was added to Gd2O3 as pH sensing membrane on silicon combined with proper rapid thermal annealing for the electrolyte–insulator– semiconductor application. It can be found that the high-k Gd2TiO5 sensing membrane annealed at 800 °C could obtain high sensitivity, high linearity, low hysteresis voltage, and low drift rate due to improvements of crystalline structures. The high-k Gd2TiO5 sensing membrane shows great promise for future bio-medical device applications.