| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1667630 | Thin Solid Films | 2012 | 5 Pages |
Abstract
An operation model for an amorphous In–Ga–Zn–O (a-IGZO) based thin film transistor (TFT) is studied. The model is not based on the exponential tail states employed in hydrogenated amorphous Si (a-Si:H) TFT, but on a power function of the carrier density which is observed in the TFT and Hall mobilities of a-IGZO. A 2D numerical simulator employing this model reproduced current–voltage characteristics under on operation of coplanar homojunction a-IGZO TFTs. Although the mathematical expression of the mobility is similar to the field effect mobility of a-Si:H TFT, the present model explains the temperature dependence of the on characteristics of a-IGZO TFT.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Katsumi Abe, Kenji Takahashi, Ayumu Sato, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono,