Passivation layer effect on surface integrity induced by Cu-CMP

To achieve efficient Cu-Chemical–Mechanical Polishing planarization at miniaturized device dimensions, there is a need for a better understanding of the surface integrity induced by the process. Surface quality and stresses are the two selected indices in this article to evaluate the Cu-CMP process induced surface integrity. The thickness of the passivation layer and the penetration depth of abrasives are considered as the main effects for the generations of surface qualities and residual stress. Experimental validation on copper films on silicon wafer was performed by CMP with different pads and slurries to generate varied residual stresses and surface qualities. Depth of scratches and surface roughness were measured by the atomic force microscope. The stress measurements of the thin films were performed by a Grazing Incident X-ray diffraction instrument with its principles based upon modified sin2Ψ method. Accordingly, the surface roughness and stress were related to the thickness of the passivation layer and the CMP process conditions. When the penetration depth is larger than the passivation layer thickness, the roughness values are mainly decided by the selection of pads and the resultant penetration depth. In addition, the residual stress profiles are dependent on the CMP process conditions which include the slurries and pad parameters. The stress profile obtained for the slurry SDK with soft pad Politex composed smallest maximum tensile stress below the surface and a steady transition of stress profile compared to the stress profile obtained at the initial condition. At the condition for the same slurry SDK, but with a hard pad of IC1000, the CMP process induced larger maximum stress and sharper profile transition.