| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1667733 | Thin Solid Films | 2011 | 4 Pages |
Abstract
We report the growth of nonpolar GaN epitaxial films on nearly lattice-matched LiGaO2 substrate by a chemical vapor deposition (CVD) method. The structural, morphological and optical properties of GaN films were investigated by X-ray diffraction, scanning electron microscopy, transmission electron microscopy (TEM), atomic force microscopy, and photoluminescence (PL) measurements. We found that growth temperature plays an important role in the preparation of pure m-plane films by CVD method. Pure m-plane GaN was achieved by optimized growth condition. Epitaxial relationship was revealed by TEM study. The PL spectrum at room temperature has a strong near-band-edge emission at 3.41 eV and a weak yellow luminescence band.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Mitch M.C. Chou, Chenlong Chen, D.R. Hang, Wen-Ting Yang,