Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1667893 | Thin Solid Films | 2011 | 4 Pages |
NiFe epitaxial films are prepared on Cr(211)bcc and Cr(100)bcc underlayers grown hetero-epitaxially on MgO single-crystal substrates by ultra-high vacuum rf magnetron sputtering. The film growth behavior and the crystallographic properties are studied by reflection high energy electron diffraction and pole figure X-ray diffraction. Metastable hcp-NiFe(11¯00) and hcp-NiFe(112¯0) crystals respectively nucleate on Cr(211)bcc and Cr(100)bcc underlayers, where the hcp-NiFe crystals are stabilized through hetero-epitaxial growth. The hcp-NiFe(11¯00) crystal is a single-crystal with the c -axis parallel to the substrate surface, whereas the hcp-NiFe(112¯0) crystal is a bi-crystal with the respective c-axes lying in plane and perpendicular each other. With increasing the film thickness, the hcp structure in the NiFe films starts to transform into more stable fcc structure by atomic displacement parallel to the hcp(0001) close packed plane. The resulting films consist of hcp and fcc crystals.