| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1667959 | Thin Solid Films | 2011 | 5 Pages |
Abstract
Transparent p-type conductive Ni0.9Cu0.1O thin films were prepared by pulsed plasma deposition (PPD) method. The effects of substrate temperature and oxygen pressure on the structural, electrical and optical properties of the films were investigated respectively. The film deposited at room temperature exhibits the highest conductivity of 5.17 S cm−1, with an average transmittance of 60% in the visible region. A transparent p-Ni0.9Cu0.1O/n-In2O3:W (IWO) hetero-junction diode was fabricated exhibiting rectifying current–voltage characteristics.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Ming Yang, Zhan Shi, Jiahan Feng, Haifeng Pu, Guifeng Li, Jun Zhou, Qun Zhang,