Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1668021 | Thin Solid Films | 2011 | 5 Pages |
Amorphous Zn and ZnO thin films have been prepared by radio frequency magnetron sputtering on Cu substrates and have been characterized by X-ray diffraction, scanning electron microscope, and Raman spectroscopy. The electrochemical performance of the thin films has been studied by galvanostatic cycling and cyclic voltammetry. The voltage dependence of Li-ion chemical diffusion coefficients, D˜Li, of the films has been determined by galvanostatic intermittent titration technique (GITT) and electrochemical impedance spectroscopy (EIS). It is found that the amorphous Zn and ZnO films exhibit almost the same D˜Li values ranging from 10− 14 to 10−12 cm2 s− 1 and similar Li-ion transport characteristics determined both by GITT and by EIS methods.