Design and fabrication of InxGa1 − xN/GaN solar cells with a multiple-quantum-well structure on SiCN/Si(111) substrates

The fabrication and characterization of InxGa1 − xN/GaN-based solar cells that use InxGa1 − xN multiple quantum wells (MQWs) and a SiCN/Si(111) substrate are reported. Solar cell operation with a low dark current density (Jd), a high open-circuit voltage (Voc), a high short-circuit current density (Jsc), and a high fill factor (FF) is demonstrated. It was found that the proposed device and fabrication technology are applicable to the realization of solar cells with a low Jd of 2.14 to 8.88 μA/cm2, a high Voc of 2.72 to 2.92 V, a high Jsc of 2.72 to 2.97 mA/cm2, and a high FF of 61.51 to 74.89%. The device performance with various quantum-well configurations was investigated under an air mass 1.5 global solar spectrum. A high photovoltaic efficiency of 5.95% in the MQW sample over the p-i-n sample was observed.