Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1668111 | Thin Solid Films | 2011 | 4 Pages |
Abstract
Epitaxial silicon thick films have been deposited at around 400 °C by mesoplasma chemical vapor deposition with trichlorosilane (TCS) as source gas. The deposition rate of the Si films increases linearly with the TCS flow rate and reaches 30 nm/s at 15 sccm of TCS. These films have exhibited relatively high hall mobility (~ 200 cm2/V-s) independently of the deposition rate.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Junichi Fukuda, Makoto Kambara, Toyonobu Yoshida,