Article ID Journal Published Year Pages File Type
1668120 Thin Solid Films 2011 5 Pages PDF
Abstract

The strong correlation between the microstructural characteristics of ZnO channel layers grown at various temperatures by radio-frequency magnetron sputtering and the electrical performances of resulting bottom-gate thin film transistors (TFTs) was reported. Transmission electron microscopy revealed that increasing growth temperature enhanced degree of c-axis preferred orientation and enlarged width of columns in the ZnO films. The ZnO channel layers grown at 250 and 350 °C exhibited TFT saturation behavior. However, growing them at ≥ 350 °C produced small grains in the junctions of ZnO/SiO2 interface and grain boundaries, which led to hump behavior in TFT transfer curve caused by formation of additional boundaries.

Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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