Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1668120 | Thin Solid Films | 2011 | 5 Pages |
Abstract
The strong correlation between the microstructural characteristics of ZnO channel layers grown at various temperatures by radio-frequency magnetron sputtering and the electrical performances of resulting bottom-gate thin film transistors (TFTs) was reported. Transmission electron microscopy revealed that increasing growth temperature enhanced degree of c-axis preferred orientation and enlarged width of columns in the ZnO films. The ZnO channel layers grown at 250 and 350 °C exhibited TFT saturation behavior. However, growing them at ≥ 350 °C produced small grains in the junctions of ZnO/SiO2 interface and grain boundaries, which led to hump behavior in TFT transfer curve caused by formation of additional boundaries.
Related Topics
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Authors
Ju Ho Lee, Cheol Hyoun Ahn, Sooyeon Hwang, Chang Ho Woo, Jin-Seong Park, Hyung Koun Cho, Jeong Yong Lee,