Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1668123 | Thin Solid Films | 2011 | 5 Pages |
Abstract
This study reports the performance and stability of hafnium-indium zinc oxide (HfInZnO) thin film transistors (TFTs) with thermally grown SiO2. The HfInZnO channel layer was deposited at room temperature by a co-sputtering system. We examined the effects of hafnium addition on the X-ray photoelectron spectroscopy properties and on the electrical characteristics of the TFTs varying the concentration of the added hafnium. We found that the transistor on-off currents were greatly influenced by the composition of hafnium addition, which suppressed the formation of oxygen vacancies. The field-effect mobility of optimized HfInZnO TFT was 1.34Â cm2Â Vâ1Â sâ1, along with an on-off current ratio of 108 and a threshold voltage of 4.54Â V. We also investigated the effects of bias stress on HfInZnO TFTs with passivated and non-passivated layers. The threshold voltage change in the passivated device after positive gate bias stress was lower than that in the non-passivated device. This result indicates that HfInZnO TFTs are sensitive to the ambient conditions of the back surface.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Dae-Ho Son, Dae-Hwan Kim, Jung-Hye Kim, Shi-Joon Sung, Eun-Ae Jung, Jin-Kyu Kang,