Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1668258 | Thin Solid Films | 2011 | 6 Pages |
Abstract
Thin films of CuIn1 â xAlxSe2 were grown using a cathodic electrodeposition technique. The CuIn1 â xAlxSe2 films were electrodeposited on SnO2 coated glass from aqueous baths containing different Al contents using deposition potentials ranging from â 650 mV to â 850 mV versus a saturated calomel electrode. The electrodeposited films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive analysis of X-rays, atomic force microscopy, and UV-VIS-NIR spectroscopy. The results show that single phase CuIn1 â xAlxSe2 films with Al content x around 0.27-0.33 having good stoichiometry can be produced in the above potential range. XRD and SEM studies show that films deposited at â 650 mV and â 750 mV have good crystallinity while those grown at â 850 mV have comparatively poorer crystallinity. SEM studies show that the particle size of the films grown at â 650 and â 750 mV is in the micron range but is around 100 nm when grown at â 850 mV. Optical studies show that the optical band gap shifts with Al content from 1.21 eV for x = 0.27 to about 1.42 eV for x = 0.33. The as-grown as well as vacuum annealed films were n-type in conductivity with resistivity in the range 3-5 Ã 10â3 Ω cm.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Dixit Prasher, Poolla Rajaram,