Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1668266 | Thin Solid Films | 2011 | 5 Pages |
Abstract
Ultra-thin magnesium oxide layers were elaborated by atomic layer deposition and oxidation process on silicon (100) starting from (2 × 1) thermally-reconstructed or hydrogen-terminated Si surfaces. Low-energy electron diffraction experiments show (2 × 3) and (3 × 3) reconstructions while depositing a magnesium monolayer on Si clean surfaces, and a 3-dimentional growth of the oxide as confirmed by ex-situ atomic force microscopy. For hydrogen-terminated or clean surfaces previously physisorbed by oxygen, uniform cobalt/magnesium-oxide/silicon stacks of layers are observed by transmission electron microscopy. Annealing above 150 °C leads to MgO dissolution and formation of an interfacial complex compound by inter-diffusion of Si and Co.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
N. Rochdi, K. Liudvikouskaya, M. Descoins, M. Raïssi, C. Coudreau, J.-L. Lazzari, H. Oughaddou, F. Arnaud D'Avitaya,