Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1668272 | Thin Solid Films | 2011 | 4 Pages |
Abstract
The homoepitaxial growth of SrTiO3 (STO) films was investigated by a large-area pulsed laser deposition (PLD), which was in-situ monitored by a high pressure reflective high energy electron diffraction. By combining a conventionally continuous film deposition with a followed interval relaxation, a persistent layer-by-layer (LBL) film growth of more than 100 unit cells STO films was achieved. This interrupted PLD technique could realize persistent LBL film growth at any laser frequency between 1 and 10Â Hz and provides an effective way to fabricate high quality complex oxide films on unit cell scale.
Related Topics
Physical Sciences and Engineering
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Authors
Y.Z. Chen, N. Pryds,