| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1668325 | Thin Solid Films | 2011 | 5 Pages |
Abstract
Fe-doped and Fe–Ga co-doped ZnO diluted magnetic semiconductor thin films on quartz substrate were studied. Rapid annealing enhanced the ferromagnetism (FM) of the films grown in Ar/O2. All the films grown in Ar are n-type and the carrier concentration could increase significantly when Ga is doped. The state of Fe in the films was investigated exhibiting Fe3+. Magnetic measurements revealed that room temperature ferromagnetism in the films were doping concentration dependent and would enhance slightly with Ga doping. The origin of the observed FM is interpreted by the overlapping of polarons mediated through oxygen vacancy based on the bound magnetic polaron model.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Wei-Guang Zhang, Bin Lu, Li-Qiang Zhang, Jian-Guo Lu, Min Fang, Ke-Wei Wu, Bing-Hui Zhao, Zhi-Zhen Ye,